型号:

NTF3055-100T1G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:MOSFET N-CH 60V 3A SOT223
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
NTF3055-100T1G PDF
产品变化通告 Specification Change MSL Updated 2/April/2007
产品目录绘图 MOSFET SOT-223 Pkg
标准包装 1,000
系列 -
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 3A
开态Rds(最大)@ Id, Vgs @ 25° C 110 毫欧 @ 1.5A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 22nC @ 10V
输入电容 (Ciss) @ Vds 455pF @ 25V
功率 - 最大 1.3W
安装类型 表面贴装
封装/外壳 TO-261-4,TO-261AA
供应商设备封装 SOT-223
包装 带卷 (TR)
产品目录页面 1558 (CN2011-ZH PDF)
其它名称 NTF3055-100T1GOS
NTF3055-100T1GOS-ND
NTF3055-100T1GOSTR
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